Paper Survey about Stochastic Leakage Modeling

Wenyao XU Fengbo REN Background on process variation and Leakage With technology scaling, the MOS device channel length is reduced. As the channel length approaches the source-body and drain-body depletion widths, the charge in the channel due to these parasitic diodes become comparable to the depletion charge due to the MOS gate-body voltage [Poon et al. 1973], rendering the gate and body terminals to be less effective. As the band diagram illustrates in Figure 3, the finite depletion width of the parasitic diodes do not influence the energy barrier height to be overcome for inversion formation in a long channel device. Figure 3 shows cross-sectional schematic of long channel and short channel